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Technical Specifications
Parameters and characteristics for this part
| Specification | QS8M51TR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5 A, 2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF, 950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 1.5 W |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QS8M51 Series
Mosfet Array 100V 2A, 1.5A 1.5W Surface Mount TSMT8
Documents
Technical documentation and resources