QS8M51 Series

Catalog

MOSFET, N AND P-CH, 100V, 2A, TSMT

Part	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature	Vgs(th) (Max) @ Id	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Rohm Semiconductor QS8M51TR	100 V	MOSFET (Metal Oxide)	1.5 W	N and P-Channel	1.5 A 2 A	4.7 nC	TSMT8	150 °C	2.5 V	Logic Level Gate	290 pF 950 pF	Surface Mount