Discrete Semiconductor Products
STU6N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE
Discrete Semiconductor Products
STU6N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STU6N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 226 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.35 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.39 | |
| Tube | 75 | $ 0.85 | ||
| 150 | $ 0.67 | |||
| 375 | $ 0.67 | |||
| 525 | $ 0.57 | |||
| 1875 | $ 0.46 | |||
| 3750 | $ 0.44 | |||
| 7500 | $ 0.42 | |||
Description
General part information
STU6N65 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources