Specification	NTHL019N65S3H

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	282 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	19.3 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

NTHL019N65S3H Series

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor NTHL019N65S3H	4 V	650 V	TO-247-3	Through Hole	282 nC	30 V	75 A	N-Channel	TO-247-3	-55 °C	150 °C	MOSFET (Metal Oxide)	625 W	19.3 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 18.39
		30	$ 15.77
Newark	Each	1	$ 28.30
		5	$ 27.60
		10	$ 26.94
		25	$ 26.35
		50	$ 25.80
ON Semiconductor	N/A	1	$ 14.50

Description

General part information

NTHL019N65S3H Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-340CX-TO-247-3LD

Package Drawing