NTHL019N65S3H Series

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor NTHL019N65S3H	4 V	650 V	TO-247-3	Through Hole	282 nC	30 V	75 A	N-Channel	TO-247-3	-55 °C	150 °C	MOSFET (Metal Oxide)	625 W	19.3 mOhm

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247

Key Features

• 700 V @ TJ= 150oC

• Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF)

• Ultra Low Gate Charge (Typ. Qg= 282 nC)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on)= 15 mΩ

• Internal Gate Resistance: 1.1 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.