Discrete Semiconductor Products

NTMFD5C650NLT1G

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POWER MOSFET DUAL N-CHANNEL 60V 111A 8-PIN DFN T/R

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Discrete Semiconductor Products

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POWER MOSFET DUAL N-CHANNEL 60V 111A 8-PIN DFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD5C650NLT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	111 A, 21 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	37 nC
Input Capacitance (Ciss) (Max) @ Vds	2546 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	3.5 W, 125 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mΩ

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Power - Max	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
ON Semiconductor NTMFD5C650NLT1G	4.2 mOhm	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	2 N-Channel (Dual)	60 V	3.5 W 125 W	Surface Mount	MOSFET (Metal Oxide)	2546 pF	21 A 111 A	-55 °C	175 ░C	2.2 V	37 nC
ON Semiconductor NTMFD5C680NLT1G		8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	2 N-Channel (Dual)	60 V		Surface Mount	MOSFET (Metal Oxide)	350 pF	7.5 A 26 A	-55 °C	175 ░C	2.2 V	5 nC	3 W 19 W
ON Semiconductor NTMFD5C466NT1G

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General part information

Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources