Specification	NTMFD5C680NLT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A, 7.5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	3 W, 19 W
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

NTMFD5C680NL Series

Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mΩ

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Power - Max	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
ON Semiconductor NTMFD5C650NLT1G	4.2 mOhm	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	2 N-Channel (Dual)	60 V	3.5 W 125 W	Surface Mount	MOSFET (Metal Oxide)	2546 pF	21 A 111 A	-55 °C	175 ░C	2.2 V	37 nC
ON Semiconductor NTMFD5C680NLT1G		8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	2 N-Channel (Dual)	60 V		Surface Mount	MOSFET (Metal Oxide)	350 pF	7.5 A 26 A	-55 °C	175 ░C	2.2 V	5 nC	3 W 19 W
ON Semiconductor NTMFD5C466NT1G

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources