Specification	NVH4L070N120M3S

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-247-4L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.4 V

NVH4L070N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 65 mohm, 1200 V, M3S, TO247-4L

Part	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Grade	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor NVH4L070N120M3S	AEC-Q101	87 mOhm	Through Hole	4.4 V	SiC (Silicon Carbide Junction Transistor)	Automotive	1200 V	18 V	TO-247-4	57 nC	N-Channel	34 A	-10 V	22 V	-55 °C	175 ░C	1230 pF	TO-247-4L

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 8.91
		10	$ 8.82
Digikey	Tube	1	$ 14.73
		30	$ 11.93
		120	$ 11.23
		510	$ 10.17
		1020	$ 9.33
Newark	Each	250	$ 9.45
ON Semiconductor	N/A	1	$ 9.26

Description

General part information

NVH4L070N120M3S Series

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.