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8-TSSOP
Discrete Semiconductor Products

UPA1807GR-9JG-E1-A

Obsolete
Renesas Electronics Corporation

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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8-TSSOP
Discrete Semiconductor Products

UPA1807GR-9JG-E1-A

Obsolete
Renesas Electronics Corporation

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUPA1807GR-9JG-E1-A
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)30 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Package / Case8-TSSOP
Package / Case [custom]0.173 "
Package / Case [custom]4.4 mm
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device Package8-TSSOP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 417$ 0.72

Description

General part information

UPA1807GR Series

The UPA1807GR is a N-Channel Mos Field Effect Transistor For Switching.

Documents

Technical documentation and resources