N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Supplier Device Package | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [custom] | Package / Case [custom] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 8-TSSOP | 2.5 V | 30 V | 8-TSSOP | 0.173 " | 4.4 mm | 19 nC | 1000 pF | MOSFET (Metal Oxide) | N-Channel | 10 mOhm | 12 A | Surface Mount |