Specification	NVMJD010N10MCLTWG

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	62 A, 11.8 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	26.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1795 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max	84 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)

NVMJD010N10MCL Series

MOSFET - Power, Dual, N-Channel, 100 V, 10 mΩ, 62 A

Part	Input Capacitance (Ciss) (Max) @ Vds	Grade	Configuration	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Qualification	Current - Continuous Drain (Id) @ 25°C	Power - Max	Rds On (Max) @ Id, Vgs
ON Semiconductor NVMJD010N10MCLTWG	1795 pF	Automotive	2 N-Channel	Surface Mount	8-LFPAK	-55 °C	175 ░C	100 V	26.4 nC	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205	AEC-Q101	11.8 A 62 A	3.1 W 84 W	10 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 1.05
		6000	$ 1.01
Newark	Each (Supplied on Full Reel)	3000	$ 1.26
		6000	$ 1.20
		12000	$ 1.08
		18000	$ 1.04
		30000	$ 1.00
ON Semiconductor	N/A	1	$ 1.06

Description

General part information

NVMJD010N10MCL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.