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Documents2N7372
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Documents2N7372
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N7372 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-254-3, TO-254AA |
| Power - Max [Max] | 4 W |
| Qualification | MIL-PRF-19500/612 |
| Supplier Device Package | TO-254 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 785.88 | |
Description
General part information
JANTX2N7372-Transistor Series
This specification covers the performance requirements for PNP, silicon, through hole power, 2N7372 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/612 .
Documents
Technical documentation and resources