Discrete Semiconductor Products

RJK03N6DPA-00#J5A

Obsolete

BUILT IN SBD N CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

BUILT IN SBD N CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03N6DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3220 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

Built In Sbd N Channel Power MOSFET

Part	FET Type	Supplier Device Package	Package / Case	Operating Temperature	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03N6DPA-00#J5A	N-Channel	8-WPAK	8-WFDFN Exposed Pad	150 °C	35 W	3220 pF	MOSFET (Metal Oxide)	Surface Mount	3.8 mOhm	40 A	19 nC	30 V

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General part information

The RJK03N6DPA is a Built In Sbd N Channel Power MOSFET.

Technical documentation and resources