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Built In Sbd N Channel Power MOSFET
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The RJK03N6DPA is a Built In Sbd N Channel Power MOSFET.
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Built In Sbd N Channel Power MOSFET
Built In Sbd N Channel Power MOSFET
| Part | FET Type | Supplier Device Package | Package / Case | Operating Temperature | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | N-Channel | 8-WPAK | 8-WFDFN Exposed Pad | 150 °C | 35 W | 3220 pF | MOSFET (Metal Oxide) | Surface Mount | 3.8 mOhm | 40 A | 19 nC | 30 V |