Discrete Semiconductor Products

ST13003

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Discrete Semiconductor Products

Active

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	ST13003

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

High voltage fast-switching NPN power transistor

Part	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature	Vce Saturation (Max) @ Ib, Ic
STMicroelectronics ST13003	40 W	SOT-32-3	400 V	-40 °C	150 °C	Through Hole	1.5 A	1 mA	NPN	5	TO-126-3 TO-225AA
STMicroelectronics ST13003D-K	40 W	SOT-32-3	400 V			Through Hole	1.5 A	1 mA	NPN	5	TO-126-3 TO-225AA	150 °C	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Technical documentation and resources