Zenode.ai Logo
Beta
CSD25483F4
Discrete Semiconductor Products

CSD17381F4

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 117 MOHM, GATE ESD PROTECTION

Deep-Dive with AI

Search across all available documentation for this part.

CSD25483F4
Discrete Semiconductor Products

CSD17381F4

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 117 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17381F4
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]195 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]109 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]12 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.25
100$ 0.16
500$ 0.12
1000$ 0.10
Digi-Reel® 1$ 0.41
10$ 0.25
100$ 0.16
500$ 0.12
1000$ 0.10
Tape & Reel (TR) 3000$ 0.09
6000$ 0.08
9000$ 0.07
15000$ 0.07
21000$ 0.07
30000$ 0.06
75000$ 0.06
150000$ 0.06
Texas InstrumentsLARGE T&R 1$ 0.14
100$ 0.09
250$ 0.07
1000$ 0.04

Description

General part information

CSD17381F4 Series

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

.