Discrete Semiconductor Products

IRFPE30

Obsolete

MOSFET N-CH 800V 4.1A TO247-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 4.1A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPE30

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division IRFPE30	MOSFET (Metal Oxide)	TO-247-3	10 V	4.1 A	125 W	78 nC	N-Channel	-55 °C	150 °C	20 V	3 Ohm	Through Hole	TO-247AC	800 V	4 V	1300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available