IRFPE30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 800V 4.1A TO247-3
| Part | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | TO-247-3 | 10 V | 4.1 A | 125 W | 78 nC | N-Channel | -55 °C | 150 °C | 20 V | 3 Ohm | Through Hole | TO-247AC | 800 V | 4 V | 1300 pF |