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2N6385
Discrete Semiconductor Products

JANTX2N6385

Active
Microchip Technology

80V 10A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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2N6385
Discrete Semiconductor Products

JANTX2N6385

Active
Microchip Technology

80V 10A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6385
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]6 W
QualificationMIL-PRF-19500/523
Supplier Device PackageTO-204AA (TO-3)
Vce Saturation (Max) @ Ib, Ic3 V
Vce Saturation (Max) @ Ib, Ic [custom]10 A
Vce Saturation (Max) @ Ib, Ic [custom]100 mA
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 55.97
Microchip DirectN/A 1$ 60.27
NewarkEach 100$ 55.97
500$ 53.81

Description

General part information

JANTX2N6385-Darlington Series

This specification covers the performance requirements for NPN silicon, power Darlington, 2N6383, 2N6384 and 2N6385 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/523.

Documents

Technical documentation and resources