Specification	FCH110N65F-F155

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds	4895 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCH110N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FCH110N65F-F155	-55 °C	150 °C	TO-247-3	20 V	TO-247-3	35 A	357 W	650 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V	5 V	110 mOhm	4895 pF	145 nC
ON Semiconductor FCH110N65F-F155	-55 °C	150 °C	TO-247-3	20 V	TO-247-3	35 A	357 W	650 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V	5 V	110 mOhm	4895 pF	145 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	69	$ 4.52
		69	$ 4.52
	Tube	1	$ 5.37
		1	$ 5.37
		10	$ 3.64
		10	$ 3.64
		100	$ 3.20
		100	$ 3.20
Newark	Each	250	$ 4.30
		500	$ 4.17
ON Semiconductor	N/A	1	$ 3.61

Description

General part information

FCH110N65F Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.