FCH110N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FCH110N65F-F155	-55 °C	150 °C	TO-247-3	20 V	TO-247-3	35 A	357 W	650 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V	5 V	110 mOhm	4895 pF	145 nC
ON Semiconductor FCH110N65F-F155	-55 °C	150 °C	TO-247-3	20 V	TO-247-3	35 A	357 W	650 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	10 V	5 V	110 mOhm	4895 pF	145 nC

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Key Features

• 700 V @ TJ= 150°C

• Typ. RDS(on)= 96 mΩ (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 98 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 308 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.