Discrete Semiconductor Products

FDS9933A

LTB

ON Semiconductor

DUAL P-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET -20V, -3.8A, 75MΩ

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Search across all available documentation for this part.

DocumentsPackage Drawing-751EB-SOIC8 Datasheet +4

Discrete Semiconductor Products

FDS9933A

LTB

ON Semiconductor

DUAL P-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET -20V, -3.8A, 75MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8 Datasheet +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS9933A

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDS9953A Series

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Part	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS9953A	Surface Mount	900 mW	3 V	130 mOhm	3.5 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	30 V	MOSFET (Metal Oxide)	2.9 A	2 P-Channel	-55 °C	150 °C
ON Semiconductor FDS9933	Surface Mount	900 mW	1.2 V	55 mOhm	20 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	5 A	2 P-Channel	-55 °C	175 ░C	825 pF
ON Semiconductor FDS9933A	Surface Mount	900 mW	1.5 V	75 mOhm		8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	3.8 A	2 P-Channel	-55 °C	150 °C	600 pF	10 nC
ON Semiconductor FDS9933BZ	Surface Mount	900 mW	1.5 V	46 mOhm		8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	4.9 A	2 P-Channel	-55 °C	150 °C	985 pF	15 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.09
		10	$ 0.89
		100	$ 0.69
		500	$ 0.59
		1000	$ 0.48
	Digi-Reel®	1	$ 1.09
		10	$ 0.89
		100	$ 0.69
		500	$ 0.59
		1000	$ 0.48
	Tape & Reel (TR)	2500	$ 0.45
		5000	$ 0.43
		12500	$ 0.41
Newark	Each (Supplied on Cut Tape)	1000	$ 0.53

Description

General part information

FDS9953A Series

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Documents

Technical documentation and resources

Package Drawing-751EB-SOIC8

Package Drawing

Datasheet

FDS9933A

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FDS9933A

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Technical Specifications

FDS9953A Series

Pricing

Description

FDS9953A Series

Documents

Package Drawing-751EB-SOIC8

Datasheet

Datasheet

Reactivation Notices EN

Product Change Notice EN

EOL Notices EN

FDS9953A Series