FDS9953A Series

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Catalog

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Part	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS9953A	Surface Mount	900 mW	3 V	130 mOhm	3.5 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	30 V	MOSFET (Metal Oxide)	2.9 A	2 P-Channel	-55 °C	150 °C
ON Semiconductor FDS9933	Surface Mount	900 mW	1.2 V	55 mOhm	20 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	5 A	2 P-Channel	-55 °C	175 ░C	825 pF
ON Semiconductor FDS9933A	Surface Mount	900 mW	1.5 V	75 mOhm		8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	3.8 A	2 P-Channel	-55 °C	150 °C	600 pF	10 nC
ON Semiconductor FDS9933BZ	Surface Mount	900 mW	1.5 V	46 mOhm		8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	20 V	MOSFET (Metal Oxide)	4.9 A	2 P-Channel	-55 °C	150 °C	985 pF	15 nC

Catalog

Dual P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -3.8A, 75mΩ

Key Features

-2.9 A, -30 V

• RDS(on)= 130 mΩ@ VGS= -10 V

• RDS(on)= 200 mΩ @ VGS= -4.5 V

• Low gate charge (2.5nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.