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Discrete Semiconductor Products

JAN2N4033UA

Active
Microchip Technology

80 V SMALL-SIGNAL BJT UA ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Discrete Semiconductor Products

JAN2N4033UA

Active
Microchip Technology

80 V SMALL-SIGNAL BJT UA ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N4033UA
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
GradeMilitary
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/512
Supplier Device PackageUA
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 63.82
Microchip DirectN/A 1$ 68.73
NewarkEach 100$ 63.82
500$ 61.36

Description

General part information

JAN2N4033UA-Transistor Series

This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources