Specification	FQP12P10

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQP12N60C Series

Power MOSFET, P-Channel, QFET<sup>®</sup>, -100 V, -11.5 A, 290 mΩ, TO-220

Part	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FQP12N60C	TO-220-3	30 V	4 V	225 W	63 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	2290 pF	N-Channel	600 V	TO-220-3	Through Hole	650 mOhm	12 A
ON Semiconductor FQP12P20	TO-220-3	30 V	5 V	120 W	40 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	1200 pF	P-Channel	200 V	TO-220-3	Through Hole	470 mOhm	11.5 A
ON Semiconductor FQP12P10	TO-220-3	30 V	4 V	75 W	27 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	10 V	800 pF	P-Channel	100 V	TO-220-3	Through Hole	290 mOhm	11.5 A
ON Semiconductor FQP12N60C	TO-220-3	30 V	4 V	225 W	63 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	2290 pF	N-Channel	600 V	TO-220-3	Through Hole	650 mOhm	12 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1000	$ 0.84
		2500	$ 0.68
		5000	$ 0.66

Description

General part information

FQP12N60C Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing