FQP12N60C Series

Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220

Catalog

Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220

Part	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FQP12N60C	TO-220-3	30 V	4 V	225 W	63 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	2290 pF	N-Channel	600 V	TO-220-3	Through Hole	650 mOhm	12 A
ON Semiconductor FQP12P20	TO-220-3	30 V	5 V	120 W	40 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	1200 pF	P-Channel	200 V	TO-220-3	Through Hole	470 mOhm	11.5 A
ON Semiconductor FQP12P10	TO-220-3	30 V	4 V	75 W	27 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	10 V	800 pF	P-Channel	100 V	TO-220-3	Through Hole	290 mOhm	11.5 A
ON Semiconductor FQP12N60C	TO-220-3	30 V	4 V	225 W	63 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	2290 pF	N-Channel	600 V	TO-220-3	Through Hole	650 mOhm	12 A

Catalog

Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220

Key Features

-11.5 A, -100 V, RDS(on)= 290 mΩ (Max.) @ VGS= -10 V, ID= -5.75 A

• Low Gate Charge (Typ. 21 nC)

• Low Crss (Typ. 65 pF)

• 100% Avalanche Tested

• 175ºC Maximum Junction Temperature Rating

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.