Discrete Semiconductor Products

FDS3580

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 80 V, 7.6 A, 0.029 OHM, SOIC, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Discrete Semiconductor Products

FDS3580

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 80 V, 7.6 A, 0.029 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS3580

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDS3580 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 80V, 8.9A, 16mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS3590	1180 pF	39 mOhm	80 V	8-SOIC	20 V	6.5 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount	35 nC	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V
ON Semiconductor FDS3580		29 mOhm	80 V	8-SOIC	20 V	7.6 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount		MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V	1800 pF	46 nC
ON Semiconductor FDS3572			80 V	8-SOIC	20 V	8.9 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount	41 nC	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V	1990 pF		16 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.11
		10	$ 1.35
		100	$ 0.92
		500	$ 0.73
		1000	$ 0.67
	Digi-Reel®	1	$ 2.11
		10	$ 1.35
		100	$ 0.92
		500	$ 0.73
		1000	$ 0.67
	Tape & Reel (TR)	2500	$ 0.60
		5000	$ 0.58
ON Semiconductor	N/A	1	$ 0.62

Description

General part information

FDS3580 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.