FDS3580 Series

N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS3590	1180 pF	39 mOhm	80 V	8-SOIC	20 V	6.5 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount	35 nC	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V
ON Semiconductor FDS3580		29 mOhm	80 V	8-SOIC	20 V	7.6 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount		MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V	1800 pF	46 nC
ON Semiconductor FDS3572			80 V	8-SOIC	20 V	8.9 A	N-Channel	8-SOIC	3.9 mm	0.154 in	6 V 10 V	Surface Mount	41 nC	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	4 V	1990 pF		16 mOhm

Catalog

N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ

Key Features

• 7.6 A, 80 V.

• RDS(ON )= 0.029 Ω @ VGS= 10 V

• RDS(ON)= 0.033 Ω @ VGS= 6 V.

• Low gate charge (34nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.