Discrete Semiconductor Products

GAP3SLT33-220FP

Obsolete

DIODE SIC 3.3KV 300MA TO220FP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIC 3.3KV 300MA TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	GAP3SLT33-220FP

Capacitance @ Vr, F	42 pF
Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Supplier Device Package	TO-220FP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	3300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GAP3SLT33-214	2.2 V	0 ns	42 pF	10 µA	175 ░C	-55 °C	DO-214AA SMB	DO-214AA	Surface Mount	SiC (Silicon Carbide) Schottky	3300 V	300 mA
GeneSiC Semiconductor GAP3SLT33-220FP		0 ns	42 pF	5 µA	175 ░C	-55 °C	TO-220-2 Full Pack	TO-220FP	Through Hole	SiC (Silicon Carbide) Schottky	3300 V	300 mA	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.59

General part information

Diode 3300 V 300mA Through Hole TO-220FP

Technical documentation and resources