GAP3SLT33 Series

Catalog

DIODE SIC 3.3KV 300MA DO214AA

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GAP3SLT33-214	2.2 V	0 ns	42 pF	10 µA	175 ░C	-55 °C	DO-214AA SMB	DO-214AA	Surface Mount	SiC (Silicon Carbide) Schottky	3300 V	300 mA
GeneSiC Semiconductor GAP3SLT33-220FP		0 ns	42 pF	5 µA	175 ░C	-55 °C	TO-220-2 Full Pack	TO-220FP	Through Hole	SiC (Silicon Carbide) Schottky	3300 V	300 mA	1.7 V