Discrete Semiconductor Products

BD1376S

Obsolete

ON Semiconductor

TRANS NPN 60V 1.5A TO-126-3

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DocumentsDatasheet

Discrete Semiconductor Products

BD1376S

Obsolete

ON Semiconductor

TRANS NPN 60V 1.5A TO-126-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BD1376S

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

BD137 Series

1.5 A, 60 V NPN Power Bipolar Junction Transistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Operating Temperature
ON Semiconductor BD137	Through Hole	1.5 A	TO-126	1.25 W	100 nA	60 V	NPN	TO-126-3 TO-225AA	40	500 mV	-55 °C	150 °C
ON Semiconductor BD1376S	Through Hole	1.5 A	TO-126-3	1.25 W	100 nA	60 V	NPN	TO-126-3 TO-225AA	40	500 mV			150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BD137 Series

This series of plastic, medium-power NPN power bipolar junction transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Documents

Technical documentation and resources