BD137 Series

1.5 A, 60 V NPN Power Bipolar Junction Transistor

Catalog

1.5 A, 60 V NPN Power Bipolar Junction Transistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Operating Temperature
ON Semiconductor BD137	Through Hole	1.5 A	TO-126	1.25 W	100 nA	60 V	NPN	TO-126-3 TO-225AA	40	500 mV	-55 °C	150 °C
ON Semiconductor BD1376S	Through Hole	1.5 A	TO-126-3	1.25 W	100 nA	60 V	NPN	TO-126-3 TO-225AA	40	500 mV			150 °C

Catalog

1.5 A, 60 V NPN Power Bipolar Junction Transistor

Key Features

• Minimum DC Current Gain - hFE= 40 @ IC= 0.15 A

• BD135, BD137, BD139 are complementary with BD136, BD138, BD140

• These are Pb-Free Devices

Description

This series of plastic, medium-power NPN power bipolar junction transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.