Discrete Semiconductor Products
STGB40V60F
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 40 A VERY HIGH SPEED
Discrete Semiconductor Products
STGB40V60F
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 40 A VERY HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB40V60F |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 226 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 283 W |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 456 µJ, 411 µJ |
| Td (on/off) @ 25°C | 208 ns, 52 ns |
| Test Condition | 400 V, 10 Ohm, 15 V, 40 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB40 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.