Discrete Semiconductor Products

2N5671

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Microchip Technology

90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

2N5671

Active

Microchip Technology

90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5671

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Cutoff (Max) [Max]	10 mA
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	6 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	90 V

JANTXV2N5671-Transistor Series

NPN Silicon High-Power 90V to 120V, 30A

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Grade
Microchip Technology 2N5671	Through Hole	10 mA	NPN	6 W	5 V	TO-204AA TO-3	90 V	30 A
Microchip Technology JANTX2N5671	Through Hole	10 mA	NPN	6 W	5 V	TO-204AA TO-3	90 V	30 A	Military
Microchip Technology JANTXV2N5671	Through Hole	10 mA	NPN	6 W	5 V	TO-204AA TO-3	90 V	30 A	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 54.57
Microchip Direct	N/A	1	$ 58.77
Newark	Each	100	$ 54.57
		500	$ 52.48

Description

General part information

JANTXV2N5671-Transistor Series

This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488. The device package outline is a TO–204AA (similar to TO-3) for all encapsulated device types.