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Discrete Semiconductor Products

APTDF100H601G

Active
Microchip Technology

600V/FULL BRIDGE/SI DIODE MODULES

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Discrete Semiconductor Products

APTDF100H601G

Active
Microchip Technology

600V/FULL BRIDGE/SI DIODE MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTDF100H601G
Current - Average Rectified (Io)135 A
Current - Reverse Leakage @ Vr250 µA
Diode TypeSingle Phase
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseSP1
Supplier Device PackageSP1
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If [Max]2 V
Voltage - Peak Reverse (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 21$ 51.66
Microchip DirectN/A 1$ 51.66
50$ 43.05
100$ 37.89
250$ 36.85
500$ 35.82
1000$ 34.44
5000$ 32.38

Description

General part information

APTDF100H601G-Module Series

* FRED Si diode

* Ultra fast recovery times

* Soft recovery characteristics