Specification	FDMS001N025DSD

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	19 A, 38 A, 69 A, 165 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds	1370 pF, 5105 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	2.3 W, 2.1 W, 42 W, 26 W
Rds On (Max) @ Id, Vgs	0.92 mOhm, 3.25 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V, 2.5 V

FDMS001N025DSD Series

25 V Asymmetric Dual N−Channel PowerTrench® Power Clip MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Technology
ON Semiconductor FDMS001N025DSD	-55 °C	150 °C	8-PowerWDFN	2 N-Channel (Dual) Asymmetrical	1370 pF 5105 pF	2.1 W 2.3 W 26 W 42 W	0.92 mOhm 3.25 mOhm	25 V	2.5 V 3 V	19 A 38 A 69 A 165 A	30 nC	104 nC	Surface Mount	8-PQFN (5x6)	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS001N025DSD Series

This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.