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JANTX2N2945A
Discrete Semiconductor Products

JANSR2N3057A

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Microchip Technology

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-206AB

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JANTX2N2945A
Discrete Semiconductor Products

JANSR2N3057A

Active
Microchip Technology

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-206AB

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Technical Specifications

Parameters and characteristics for this part

SpecificationJANSR2N3057A
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-206AB, TO-46-3 Metal Can
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/391
Supplier Device PackageTO-46
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 127.03

Description

General part information

JAN2N3057A-Transistor Series

This 2N3057A leaded silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-206AB (TO-46) package. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

Documents

Technical documentation and resources

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