Specification	KSC1008YBU

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSC1008 Series

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSC1008GTA	TO-92-3	100 nA	Through Hole	400 mV	150 °C	200	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008YBU	TO-92-3	100 nA	Through Hole	400 mV	150 °C	120	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008YTA	TO-92-3	100 nA	Through Hole	400 mV	150 °C	120	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008CYBU	TO-92-3	100 nA	Through Hole	400 mV	150 °C	120	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008YBU	TO-92-3	100 nA	Through Hole	400 mV	150 °C	120	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008OTA	TO-92-3	100 nA	Through Hole	400 mV	150 °C	70	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008COBU	TO-92-3	100 nA	Through Hole	400 mV	150 °C	70	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V
ON Semiconductor KSC1008OTA	TO-92-3	100 nA	Through Hole	400 mV	150 °C	70	700 mA	NPN	TO-226-3 TO-92-3	800 mW	50 MHz	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources