Zenode.ai Logo
Beta
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Discrete Semiconductor Products

KSC1008GTA

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Discrete Semiconductor Products

KSC1008GTA

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationKSC1008GTA
Current - Collector (Ic) (Max) [Max]700 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]800 mW
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

KSC1008 Series

NPN Epitaxial Silicon Transistor