SG2013J
ActiveDRIVER - DARLINGTON TRANSISTOR ARRAY - 50V 600MA 5V TTL, CMOS
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SG2013J
ActiveDRIVER - DARLINGTON TRANSISTOR ARRAY - 50V 600MA 5V TTL, CMOS
Technical Specifications
Parameters and characteristics for this part
| Specification | SG2013J |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 900 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 7.62 mm, 0.3 in |
| Package / Case | 16-CDIP |
| Supplier Device Package | 16-CERDIP |
| Vce Saturation (Max) @ Ib, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 135.65 | |
Description
General part information
SG2013 Series
The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities.
Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to 125°C ambient temperature in a 16 pin dual in line ceramic (J) package and 20 pin Leadless Chip Carrier (LCC). The plastic SOIC (DW) is designed to operate over the commercial temperature range of 0°C to 70°C
Documents
Technical documentation and resources
