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IRF840ALPBF
Discrete Semiconductor Products

IRF9520L

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IRF840ALPBF
Discrete Semiconductor Products

IRF9520L

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9520L
Current - Continuous Drain (Id) @ 25°C6.8 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds390 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageI2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IRF9520 Series

P-Channel 100 V 6.8A (Tc) Through Hole I2PAK

Documents

Technical documentation and resources