IRF9520 Series

Catalog

MOSFET P-CH 100V 6.8A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Package / Case
Vishay General Semiconductor - Diodes Division IRF9520STRLPBF	390 pF	P-Channel	10 V	Surface Mount	18 nC	600 mOhm	6.8 A	MOSFET (Metal Oxide)	20 V	4 V	-55 °C	175 ░C	100 V	3.7 W 60 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRF9520SPBF	390 pF	P-Channel	10 V	Surface Mount	18 nC	600 mOhm	6.8 A	MOSFET (Metal Oxide)	20 V	4 V	-55 °C	175 ░C	100 V	3.7 W 60 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRF9520L	390 pF	P-Channel	10 V	Through Hole	18 nC	600 mOhm	6.8 A	MOSFET (Metal Oxide)	20 V	4 V	-55 °C	175 ░C	100 V		I2PAK	I2PAK TO-262-3 Long Leads TO-262AA
Vishay General Semiconductor - Diodes Division IRF9520STRRPBF	390 pF	P-Channel	10 V	Surface Mount	18 nC	600 mOhm	6.8 A	MOSFET (Metal Oxide)	20 V	4 V	-55 °C	175 ░C	100 V	3.7 W 60 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB