CSD22204W
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 9.9 MOHM, GATE ESD PROTECTION
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CSD22204W
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 9.9 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD22204W |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DSBGA, 9-UFBGA |
| Power Dissipation (Max) | 1.7 W |
| Rds On (Max) @ Id, Vgs | 9.9 mOhm |
| Supplier Device Package | 9-DSBGA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 3000 | $ 0.22 | |
| 6000 | $ 0.21 | |||
| 9000 | $ 0.20 | |||
| 12000 | $ 0.20 | |||
| 15000 | $ 0.20 | |||
| 30000 | $ 0.20 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.65 | |
| 10 | $ 0.56 | |||
| 100 | $ 0.39 | |||
| 500 | $ 0.30 | |||
| 1000 | $ 0.25 | |||
| Digi-Reel® | 1 | $ 0.65 | ||
| 10 | $ 0.56 | |||
| 100 | $ 0.39 | |||
| 500 | $ 0.30 | |||
| 1000 | $ 0.25 | |||
| Tape & Reel (TR) | 3000 | $ 0.22 | ||
| 6000 | $ 0.21 | |||
| 9000 | $ 0.19 | |||
| 30000 | $ 0.19 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.39 | |
| 100 | $ 0.26 | |||
| 250 | $ 0.20 | |||
| 1000 | $ 0.14 | |||
Description
General part information
CSD22204W Series
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Documents
Technical documentation and resources
