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AT25XE041D-SHN-B
Integrated Circuits (ICs)

AT25SF321B-SHB-B

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Renesas Electronics Corporation

32MBIT, 2.7V MINIMUM SPI SERIAL FLASH MEMORY WITH DUAL I/O SUPPORT

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AT25XE041D-SHN-B
Integrated Circuits (ICs)

AT25SF321B-SHB-B

Active
Renesas Electronics Corporation

32MBIT, 2.7V MINIMUM SPI SERIAL FLASH MEMORY WITH DUAL I/O SUPPORT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationAT25SF321B-SHB-B
Clock Frequency108 MHz
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization4M x 8
Memory Size32 Gbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.209 "
Package / Case [y]5.3 mm
Supplier Device Package8-SOIC
TechnologyFLASH - NOR
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page [custom]3 ms
Write Cycle Time - Word, Page [custom]50 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 4500$ 0.50

Description

General part information

AT25SF321B Series

The AT25SF321 serial interface Flash memory device is designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25SF321 is ideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the AT25SF321 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.

The device also contains three pages of Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. These Security Register pages can be individually locked.

Documents

Technical documentation and resources