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TO-220F
Discrete Semiconductor Products

FQPF46N15

Obsolete
ON Semiconductor

MOSFET N-CH 150V 25.6A TO220F

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TO-220F
Discrete Semiconductor Products

FQPF46N15

Obsolete
ON Semiconductor

MOSFET N-CH 150V 25.6A TO220F

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQPF46N15
Current - Continuous Drain (Id) @ 25°C25.6 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds3250 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 243$ 1.24
243$ 1.24

Description

General part information

FQPF4N90C Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources