Specification	FQPF47P06YDTU

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Formed Leads
Power Dissipation (Max) [Max]	62 W
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQPF4N90C Series

Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQPF47P06YDTU	110 nC	26 mOhm	TO-220F-3	4 V	TO-220-3 Full Pack Formed Leads	Through Hole	62 W	-55 °C	175 ░C	25 V	60 V	MOSFET (Metal Oxide)	3600 pF	30 A	P-Channel	10 V
ON Semiconductor FQPF4N80	25 nC		TO-220F-3	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	30 V	800 V	MOSFET (Metal Oxide)	880 pF	2.2 A	N-Channel	10 V	3.6 Ohm	43 W
ON Semiconductor FQPF4N20			TO-220F-3	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	30 V	200 V	MOSFET (Metal Oxide)		2.8 A	N-Channel	10 V	1.4 Ohm	27 W	6.5 nC
ON Semiconductor FQPF4N20L			TO-220F-3	2 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	20 V	200 V	MOSFET (Metal Oxide)		3 A	N-Channel		1.35 Ohm	27 W	5.2 nC	310 pF	10 V	5 V
ON Semiconductor FQPF4N20			TO-220F-3	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	30 V	200 V	MOSFET (Metal Oxide)		2.8 A	N-Channel	10 V	1.4 Ohm	27 W	6.5 nC
ON Semiconductor FQPF46N15	110 nC		TO-220F-3	4 V	TO-220-3 Full Pack	Through Hole		-55 °C	175 ░C	25 V	150 V	MOSFET (Metal Oxide)		25.6 A	N-Channel	10 V	42 mOhm	66 W		3250 pF
ON Semiconductor FQPF44N10			TO-220F-3	4 V	TO-220-3 Full Pack	Through Hole	55 W	-55 °C	175 ░C	25 V	100 V	MOSFET (Metal Oxide)		27 A	N-Channel	10 V	39 mOhm		62 nC	1800 pF
ON Semiconductor FQPF4N90C	22 nC	4.2 Ohm	TO-220F-3	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	30 V	900 V	MOSFET (Metal Oxide)		4 A	N-Channel	10 V		47 W		960 pF
ON Semiconductor FQPF47P06	110 nC	26 mOhm	TO-220F-3	4 V	TO-220-3 Full Pack	Through Hole	62 W	-55 °C	175 ░C	25 V	60 V	MOSFET (Metal Oxide)	3600 pF	30 A	P-Channel	10 V
ON Semiconductor FQPF4N90CT	22 nC	4.2 Ohm	TO-220F-3	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	30 V	900 V	MOSFET (Metal Oxide)		4 A	N-Channel	10 V		47 W		960 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQPF4N90C Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.