Zenode.ai Logo
Beta
ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

FDB33N25TM

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 33 A, 250 V, 0.077 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

FDB33N25TM

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 33 A, 250 V, 0.077 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB33N25TM
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds2135 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]235 W
Rds On (Max) @ Id, Vgs94 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.96
10$ 1.92
100$ 1.33
Digi-Reel® 1$ 2.96
10$ 1.92
100$ 1.33
Tape & Reel (TR) 800$ 1.02
1600$ 0.95
2400$ 0.93
NewarkEach 1$ 3.43
10$ 2.45
100$ 1.88
500$ 1.77
1600$ 1.67
ON SemiconductorN/A 1$ 0.99

Description

General part information

FDB33N25 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.