FDB33N25 Series

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK

Part	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]
ON Semiconductor FDB33N25TM	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	10 V	250 V	-55 °C	150 °C	2135 pF	MOSFET (Metal Oxide)	30 V	48 nC	33 A	94 mOhm	N-Channel	TO-263 (D2PAK)	Surface Mount	235 W

Catalog

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK

Key Features

• RDS(on)= 94mΩ ( Max.)@ VGS= 10V, ID= 16.5A

• Low gate charge ( Typ. 36.8nC)

• Low Crss( Typ. 39pF)

• 100% avalanche tested

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.