Discrete Semiconductor Products
STB10LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE
Discrete Semiconductor Products
STB10LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB10LN80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 427 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 630 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB10LN80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources