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IRG4IBC30WPBF-INF
Discrete Semiconductor Products

FCPF2250N80Z

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2.6 A, 2.25 Ω, TO-220F

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IRG4IBC30WPBF-INF
Discrete Semiconductor Products

FCPF2250N80Z

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2.6 A, 2.25 Ω, TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF2250N80Z
Current - Continuous Drain (Id) @ 25°C2.6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds585 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]21.9 W
Rds On (Max) @ Id, Vgs2.25 Ohm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 199$ 1.51
NewarkEach 1000$ 1.74
2500$ 1.40
5000$ 1.36
ON SemiconductorN/A 1$ 1.20

Description

General part information

FCPF2250N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.